(China (Mainland))
Product Summary
The IRG4PH30K is an insulated gate bipolar transistor.
Parametrics
IRG4PH30K absolute maximum ratings: (1)VCES, Collector-to-Emitter Voltage: 1200 V; (2)IC @ TC = 25℃, Continuous Collector Current: 20A; (3)IC @ TC = 100℃, Continuous Collector Current: 10 A; (4)ICM, Pulsed Collector Current: 40A; (5)ILM, Clamped Inductive Load Current: 40A; (6)tsc Short Circuit Withstand Time :10 μs; (7)VGE, Gate-to-Emitter Voltage: ±20 V; (8)EARV, Reverse Voltage Avalanche Energy: 121 mJ; (9)PD @ TC = 25℃, Maximum Power Dissipation: 100 W; (10)PD @ TC = 100℃, Maximum Power Dissipation: 42W; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to +150℃; (12)Soldering Temperature, for 10 sec. 300℃ (0.063 in. (1.6mm) from case); (13)Mounting torque, 6-32 or M3 screw: 1.1Nm.
Features
IRG4PH30K features: (1)High short circuit rating optimized for motor control,tsc =10μs, VCC = 720V , TJ = 125℃, VGE = 15V; (2)Combines low conduction losses with high switching speed; (3)Latest generation design provides tighter parameter distribution and higher efficiency than previous generations.
Diagrams
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 IRG4PH30K |
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IGBT UFAST 1200V 20A TO-247AC |
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IRG4PH30KD |
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IGBT W/DIODE 1200V 20A TO-247AC |
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IRG4PH30KDPBF |
International Rectifier |
IGBT Transistors |
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IRG4PH30KPBF |
International Rectifier |
IGBT Transistors |
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