(China (Mainland))
Product Summary
The IRF640PBF is designed as one kind of HEXFET power MOSFET device. The TO-220 package of IRF640PBF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
Parametrics
IRF640PBF absolute maximum ratings: (1)continuous drain current, VGS @ 10 V Tc = 25 ℃: 18 A;(2)continuous drain current, VGS @ 10 V Tc = 100 ℃: 11 A;(3)pulsed drain current: 72 A;(4)linear derating factor: 1.0 W/℃;(5)gate-to-source voltage of the IRF640PBF: +/- 20 V;(6)single pulse avalanche energy: 580 mJ;(7)avalanche current: 18 A;(8)repetitive avalanche energy: 13 mJ;(9)peak diode recovery dv/dt: 5.0 V/ns;(10)operating junction and storage temperature range: -55 ℃ to +150 ℃.
Features
IRF640PBF features: (1)dynamic dv/dt rating;(2)repetitive avalanche rated;(3)fast switching;(4)ease of paralleling;(5)simple drive requirements.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF640PBF |
Vishay/Siliconix |
MOSFET N-Chan 200V 18 Amp |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
IRF610 |
Vishay/Siliconix |
MOSFET N-Chan 200V 3.3 Amp |
Data Sheet |
|
|
||||||||||||
 |
IRF610, SiHF610 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
IRF610_R4941 |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
|
||||||||||||
|
IRF6100 |
|
MOSFET P-CH 20V 5.1A FLIP-FET |
Data Sheet |
Negotiable |
|
||||||||||||
|
IRF6100PBF |
|
MOSFET P-CH 20V 5.1A FLIPFET |
Data Sheet |
Negotiable |
|
||||||||||||
|
IRF610A |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
