Product Summary
The IRFB4310ZPBF is a Power MOSFET. The applications of the device include High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching and Hard Switched and High Frequency Circuits.
Parametrics
IRFB4310ZPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 217 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 90A; (3)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V (Package Limited): 75A; (4)IDM, Pulsed Drain Current: 560A; (5)PD @TC = 25℃, Maximum Power Dissipation: 250W; (6)Linear Derating Factor: 1.7 W/℃; (7)VGS, Gate-to-Source Voltage: ±20 V; (8)dv/dt, Peak Diode Recovery: 18V/ns; (9)TJ,TSTG, Operating Junction and Storage Temperature Range: -55 to 175℃; (10)Soldering Temperature, for 10 seconds (1.6mm from case): 300℃; (11)Mounting torque, 6-32 or M3 screw: 1.1Nm.
Features
IRFB4310ZPBF features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFB4310ZPBF |
International Rectifier |
MOSFET MOSFT 100V 127A 6mOhm 120nC Qg |
Data Sheet |
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IRFB11N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
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IRFB11N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 11 Amp |
Data Sheet |
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IRFB13N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFB13N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 14 Amp |
Data Sheet |
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IRFB16N50K |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
Negotiable |
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IRFB16N50KPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
Negotiable |
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