IRFP250MPBF

Power MOSFET, 30A, 21 mJ, ± 20 V, Advanced Process Technology, Simple Drive Requirements, Lead-Free

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Price:: US $0.10~3.00 / piece [Get Latest Price]

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PartNumber:: IRFP250MPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

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Products Upload time: 2011-09-14

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Product Summary

The IRFP250MPBF is a Power MOSFET. The IRFP250MPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFP250MPBF well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

T IRFP250MPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 30A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 21 A; (3)IDM, Pulsed Drain Current: 120A; (4)PD @TC = 25℃, Power Dissipation :214 W; (5)Linear Derating Factor: 1.4 W/℃; (6)VGS, Gate-to-Source Voltage: ± 20 V; (7)EAS, Single Pulse Avalanche Energy: 315 mJ; (8)IAR, Avalanche Current: 30 A; (9)EAR, Repetitive Avalanche Energy: 21 mJ; (10)dv/dt, Peak Diode Recovery dv/dt: 8.6 V/ns; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to +175℃; (12)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case ); (13)Mounting torque, 6-32 or M3 srew: 1.1Nm.

Features

IRFP250MPBF features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements; (8)Lead-Free.