(China (Mainland))
Product Summary
The IRF1018EPBF is a HEXFET power MOSFET. It is widely used as high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Parametrics
IRF1018EPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V, ID @ TC = 25℃: 79A; (2)Continuous Drain Current, VGS @ 10V, ID @ TC = 100℃: 56A; (3)Pulsed Drain Current, IDM: 315A; (4)Maximum Power Dissipation, PD @TC = 25℃: 110W; (5)Linear Derating Factor: 0.76W/℃; (6)Gate-to-Source Voltage, VGS: ±20V; (7)Peak Diode Recovery, dv/dt: 21V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to + 175℃; (9)Soldering Temperature, for 10 seconds (1.6mm from case); (10)Mounting torque, 6-32 or M3 screw: 10lb.in (1.1N.m).
Features
IRF1018EPBF features: (1)Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability.
Diagrams
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 IRF1018EPBF |
International Rectifier |
MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg |
Data Sheet |
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IRF1 100 5% |
Vishay/Dale |
Power Inductors 100uH 5% |
Data Sheet |
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IRF1 560 10% |
Vishay/Dale |
Power Inductors 560uH 10% |
Data Sheet |
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IRF1010E |
International Rectifier |
MOSFET N-CH 60V 84A TO-220AB |
Data Sheet |
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IRF1010EL |
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MOSFET N-CH 60V 84A TO-262 |
Data Sheet |
Negotiable |
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IRF1010ELPBF |
International Rectifier |
MOSFET N-CH 60V 84A TO-262 |
Data Sheet |
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IRF1010EPBF |
International Rectifier |
MOSFET MOSFT 60V 81A 12mOhm 86.6nC |
Data Sheet |
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