Product Summary
The IRF520PBF is the third generation power MOSFETs from Vishay. It provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package of RF520PBF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
Parametrics
IRF520PBF absolute maximum ratings: (1)Drain-Source Voltage, VDS: 100V; (2)Gate-Source Voltage, VGS: ±20V; (3)Pulsed Drain Current, IDM: 37A; (4)Linear Derating Factor: 0.40W/℃; (5)Single Pulse Avalanche Energy, EAS: 200mJ; (6)Repetitive Avalanche Current, IAR: 9.2A; (7)Repetitive Avalanche Energy, EAR: 6.0 mJ; (8)Maximum Power Dissipation, TC=25℃, PD: 60W; (9)Peak Diode Recovery dV/dtc, dV/dt: 5.5V/ns; (10)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to +175℃; (11)Soldering Recommendations (Peak Temperature), for 10s: 300d.
Features
IRF520PBF features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Ease of Paralleling; (6)Simple Drive Requirements; (7)Lead (Pb)-free Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF520PBF |
Vishay/Siliconix |
MOSFET N-Chan 100V 9.2 Amp |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRF500 |
Other |
Data Sheet |
Negotiable |
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IRF510 |
Vishay/Siliconix |
MOSFET N-Chan 100V 5.6 Amp |
Data Sheet |
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IRF510, SiHF510 |
Other |
Data Sheet |
Negotiable |
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IRF510_R4941 |
Fairchild Semiconductor |
MOSFET TO-220AB N-Ch Power |
Data Sheet |
Negotiable |
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IRF510A |
Fairchild Semiconductor |
MOSFET 100V .2 OHM 33W |
Data Sheet |
Negotiable |
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IRF510A_Q |
Fairchild Semiconductor |
MOSFET 100V .2 Ohm 33W |
Data Sheet |
Negotiable |
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